2n5551 transistor datasheet books

Dec 21, 2017 the 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. Npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications, 2n5551 datasheet, 2n5551 circuit, 2n5551 data sheet. Small signal high voltage transistor npn features high voltage npn transistor for general purpose and telephony applications mechanical data case. Introduction so far in ee100 you have seen analog circuits. Maximum ratings are those values beyond which device damage can occur. Bipolar transistor and mosfet electrical engineering books, computer engineering, electronic. The purpose of this book is to help the reader to understand how transistors work and how to design a simple transistor circuit. C unless noted otherwise symbol description 2n5551 unit conditions. Please consult the most recently issued document before initiating or completing a design. Applications switching and amplification in high voltage applications such as telephony. Aug 29, 2016 2n5551 datasheet npn amplifier fairchild, mmbt5551 datasheet, 2n5551 pdf, 2n5551 pinout, 2n5551 equivalent, data, circuit, output, ic, 2n5551 schematic. Unfollow transistor 2n5551 to stop getting updates on your ebay feed. Semtech, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.

Then you learned how circuit elements do not operate the same at all frequencies. Complementary low voltage transistor stmicroelectronics. Kst904 1 2n5551 npn silicon transistor descriptions general purpose amplifier high voltage application features high collector breakdown voltage. The operating characteristics of a transistor are all found on its data sheet.

It also has decent switching characteristics transition frequency is mhz hence can amplify lowlevel signals. Absolute maximum ratings ta 25c unless otherwise noted. Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers vceo vcbo vebo ic tj, tstg collectorbase voltage emitterbase voltage collector current continuous collectoremitter voltage. Bipolar bjt single transistor, npn, v, mhz, mw, ma, 80 hfe. Hilitchi 24values 2n2222s9018 bc327bc558 npn pnp power general purpose transistors assortment kit pack of 840. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free plating halogen free 1 2 3 2n5551lx. Please practice handwashing and social distancing, and check out our resources for adapting to these times. Hilitchi 24values 2n2222s9018 bc327bc558 npn pnp power. Absolute maximum ratings ta 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. The 2n3904 is a common npn bipolar junction transistor used for generalpurpose lowpower amplifying or switching applications. H utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as.

Semiconductor data sheets andor specifications can and do vary in different applications and. Your personal data will be used to support your experience throughout this website, to manage access to your account, and for other purposes described in our privacy policy. Finding the early voltage from the 2n5551 datasheet. Is it possible to find the early voltage va of the 2n5551 based on the information in the datasheet. Consider the contents of this book as the first mile of a long journey into transistor. Free devices maximum ratings rating symbol value unit collector.

Hilitchi 675piece 15 values 2n2222s9018 npn pnp power. Base suffix y means hfe 180240 in 2n5551 test condition. Due to this feature, the transistor is commonly used for amplification of audio or other low power signals. The resistor r1 is the load resistor and the resistor r2 is the emitter resistor. Guide to 2n series transistors approximate specs and characteristics.

Finding the early voltage from the 2n5551 datasheet physics forums. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. Semtech, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits. The npn complementary for the device is 2n5551 and is available in to92, sot54 pin configuration. High dc current gain hfe, typically 80 when ic10ma. You started with simple resistive circuits, then dynamical systems circuits with capacitors and inductors and then opamps. Diodes and transistors pdf 28p this note covers the following topics. Datasheet 2n5551 fairchild transistor npn to92 for sale. Motorola smallsignal transistors, fets and diodes device data 1 npn silicon maximum ratings rating symbol 2n5550 2n5551 unit collectoremitter voltage vceo 140 160 vdc. Small signal npn bipolar transistor as told earlier the 2n npn transistor is widely used for amplification. Here is an image showing the pin diagram of the this transistor. Trabsistor told earlier the 2n npn transistor is widely used for amplification. Mv1624 mv1636 mv1640 bc237 mps4123 opposite transistor bc107 specifications mps3646 mps3646 equivalent transistor equivalent 2n5551 transistor equivalent book 2n5401 2n3819 equivalent transistor transistor 2n5551 equivalent. It is addressed to amateur circuit designer with little or no previous knowledge on semiconductors.

B1 1 june 2009 2n5551 mmbt5551 npn general purpose amplifier features this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. The 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. Free packages are available maximum ratings rating symbol value unit collector. As it happens, i see that the spice model in the datasheet lists this parameter at 100v, but that bypasses the purpose of the question. Elektronische bauelemente ss8050 npn silicon general purpose transistor 26oct2009 rev. In my book, the early effect is modelled as a resistor, ro, between the collector and. Onsemi mplifier transistorsnpn silicon,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Toshiba transistor silicon npn epitaxial type pct process. Discrete semiconductors data sheet book, halfpage m3d186 2n5550. Need to know if the part can handle the frequency or give you the gain you need, look at the data sheet. This agreement may be executed in counterparts, each of which shall be deemed to be an original, and which together shall constitute one and the teansistor agreement. Connect this pages through directly deep link is free datasheet search site. Hilitchi 675piece 15 values 2n2222s9018 npn pnp power general purpose transistors assortment kit. You can use all semiconductor datasheet in alldatasheet, by no fee and no register.

All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of licensee licensee confidential informationand on semiconductor shall protect the confidentiality of all licensee confidential information. Ss9015 pnp epitaxial silicon transistor filipeflop. H utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as maximum ratings, operating condition ranges, or. Changing the value of r l will affect the amplification of the output wave. Ceo 160v ideal for low power amplification and switching. This agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto. Please note, these are also duplicated in the bipolar transistors listings which is. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. They are designed for audio amplifiers and drivers utilizing complementary or quasicomplementary circuits. C page 2 of 2 any changes of specification will not. Click here specifications bipolar transistor transistor polarity. Please note the revision andor date on the drawi ng and. Electronics engineering books transistor circuits books diodes and transistors pdf 28p this note covers the following topics.

Btmapril 20062n5551 mmbt5551npn general purpose amplifierfeatures this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. Also the output impedance of a transistor is not ro alone as hoe is. Complementary low voltage transistor features products are preselected in dc current gain application general purpose description these epitaxial planar transistors are mounted in the sot32 plastic package. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector.

It was used for a good number of years and contains thousands of types. Fairchildonsemiconductor get it fast same day shipping. Semtech npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. This is where you will find all the transistors specifically in the 2n series. The characteristics and approximate specifications of 2n series discrete transistors are generally the same between different manufacturers. Is it possible to find the early voltage va of the 2n5551 based on the. It also has decent switching characteristics transition frequency is 100mhz hence can amplify lowlevel signals.